Chalcogenide random access memory cell with structure of W sub-microtube heater electrode
文献类型:期刊论文
作者 | Bo, L ; Feng, GM ; Wu, LC ; Song, ZT ; Liu, QB ; Feng, SL ; Bomy, C |
刊名 | CHINESE PHYSICS LETTERS |
出版日期 | 2007 |
卷号 | 24期号:1页码:262-264 |
ISSN号 | 0256-307X |
关键词 | PHASE-CHANGE MEMORY ION-BEAM METHOD SB2TE3 MATERIAL GE2SB2TE5 FILM ELEMENT CRYSTALLIZATION |
通讯作者 | Bo, L, Chinese Acad Sci, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95085] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Bo, L,Feng, GM,Wu, LC,et al. Chalcogenide random access memory cell with structure of W sub-microtube heater electrode[J]. CHINESE PHYSICS LETTERS,2007,24(1):262-264. |
APA | Bo, L.,Feng, GM.,Wu, LC.,Song, ZT.,Liu, QB.,...&Bomy, C.(2007).Chalcogenide random access memory cell with structure of W sub-microtube heater electrode.CHINESE PHYSICS LETTERS,24(1),262-264. |
MLA | Bo, L,et al."Chalcogenide random access memory cell with structure of W sub-microtube heater electrode".CHINESE PHYSICS LETTERS 24.1(2007):262-264. |
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