中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Chalcogenide random access memory cell with structure of W sub-microtube heater electrode

文献类型:期刊论文

作者Bo, L ; Feng, GM ; Wu, LC ; Song, ZT ; Liu, QB ; Feng, SL ; Bomy, C
刊名CHINESE PHYSICS LETTERS
出版日期2007
卷号24期号:1页码:262-264
ISSN号0256-307X
关键词PHASE-CHANGE MEMORY ION-BEAM METHOD SB2TE3 MATERIAL GE2SB2TE5 FILM ELEMENT CRYSTALLIZATION
通讯作者Bo, L, Chinese Acad Sci, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95085]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Bo, L,Feng, GM,Wu, LC,et al. Chalcogenide random access memory cell with structure of W sub-microtube heater electrode[J]. CHINESE PHYSICS LETTERS,2007,24(1):262-264.
APA Bo, L.,Feng, GM.,Wu, LC.,Song, ZT.,Liu, QB.,...&Bomy, C.(2007).Chalcogenide random access memory cell with structure of W sub-microtube heater electrode.CHINESE PHYSICS LETTERS,24(1),262-264.
MLA Bo, L,et al."Chalcogenide random access memory cell with structure of W sub-microtube heater electrode".CHINESE PHYSICS LETTERS 24.1(2007):262-264.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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