Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
文献类型：期刊论文
| 作者 | Xu, AH ; Qi, M ; Zhu, FY ; Sun, H ; Ai, LK |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2007 |
| 卷号 | 301页码:212-216 |
| 关键词 | GAAS INP |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xu, AH, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95088]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, AH,Qi, M,Zhu, FY,et al. Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors[J]. JOURNAL OF CRYSTAL GROWTH,2007,301:212-216. |
| APA | Xu, AH,Qi, M,Zhu, FY,Sun, H,&Ai, LK.(2007).Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors.JOURNAL OF CRYSTAL GROWTH,301,212-216. |
| MLA | Xu, AH,et al."Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors".JOURNAL OF CRYSTAL GROWTH 301(2007):212-216. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。