Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer
文献类型：期刊论文
| 作者 | Cheng, XH ; Wan, L ; Song, ZR ; Yu, YH ; Shen, DS |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:15页码:152910-152910 |
| 关键词 | HAFNIUM HFO2 SIO2 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Cheng, XH, Univ Wenzhou, Dept Phys, Xueyuan Rd 276, Wenzhou 325027, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95096]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, XH,Wan, L,Song, ZR,et al. Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer[J]. APPLIED PHYSICS LETTERS,2007,90(15):152910-152910. |
| APA | Cheng, XH,Wan, L,Song, ZR,Yu, YH,&Shen, DS.(2007).Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer.APPLIED PHYSICS LETTERS,90(15),152910-152910. |
| MLA | Cheng, XH,et al."Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer".APPLIED PHYSICS LETTERS 90.15(2007):152910-152910. |
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