中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer

文献类型:期刊论文

作者Cheng, XH ; Wan, L ; Song, ZR ; Yu, YH ; Shen, DS
刊名APPLIED PHYSICS LETTERS
出版日期2007
卷号90期号:15页码:152910-152910
关键词HAFNIUM HFO2 SIO2
ISSN号0003-6951
通讯作者Cheng, XH, Univ Wenzhou, Dept Phys, Xueyuan Rd 276, Wenzhou 325027, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95096]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Cheng, XH,Wan, L,Song, ZR,et al. Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer[J]. APPLIED PHYSICS LETTERS,2007,90(15):152910-152910.
APA Cheng, XH,Wan, L,Song, ZR,Yu, YH,&Shen, DS.(2007).Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer.APPLIED PHYSICS LETTERS,90(15),152910-152910.
MLA Cheng, XH,et al."Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer".APPLIED PHYSICS LETTERS 90.15(2007):152910-152910.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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