Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon
文献类型：期刊论文
| 作者 | Wei, WS ; Xu, GY ; Wang, TM ; Shen, WZ |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2007 |
| 卷号 | 515期号:7-8页码:3997-4003 |
| 关键词 | RESONANT-TUNNELING DIODES AMORPHOUS-SILICON GAP STATES TRANSPORT CAPACITANCE BARRIER DENSITY |
| ISSN号 | 0040-6090 |
| 通讯作者 | Wei, WS, Wenzhou Univ, Sch Phys & Elect Informat, Wenzhou 325027, Zhejiang Prov, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95097]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei, WS,Xu, GY,Wang, TM,et al. Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon[J]. THIN SOLID FILMS,2007,515(7-8):3997-4003. |
| APA | Wei, WS,Xu, GY,Wang, TM,&Shen, WZ.(2007).Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon.THIN SOLID FILMS,515(7-8),3997-4003. |
| MLA | Wei, WS,et al."Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon".THIN SOLID FILMS 515.7-8(2007):3997-4003. |
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