Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation
文献类型：期刊论文
| 作者 | Cheng, XL ; Liu, H ; Zhang, F |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2007 |
| 卷号 | 253期号:10页码:4472-4476 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS SIMOX TECHNOLOGY SUBSTRATE ULTRATHIN MOSFETS GROWTH LAYER |
| ISSN号 | 0169-4332 |
| 通讯作者 | Cheng, XL, Univ Sci & Technol, Dept Appl Phys, Suzhou 215009, Peoples R China |
| 学科主题 | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95103]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, XL,Liu, H,Zhang, F. Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation[J]. APPLIED SURFACE SCIENCE,2007,253(10):4472-4476. |
| APA | Cheng, XL,Liu, H,&Zhang, F.(2007).Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation.APPLIED SURFACE SCIENCE,253(10),4472-4476. |
| MLA | Cheng, XL,et al."Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation".APPLIED SURFACE SCIENCE 253.10(2007):4472-4476. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。