Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application
文献类型：期刊论文
| 作者 | Wu, LC ; Song, ZT ; Liu, B ; Rao, F ; Xu, C ; Zhang, T ; Yin, WJ ; Feng, SL |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:4页码:1103-1105 |
| 关键词 | RANDOM-ACCESS MEMORY THIN OXIDE-FILMS GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NEGATIVE RESISTANCE NIO FILMS |
| ISSN号 | 0256-307X |
| 通讯作者 | Wu, LC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95105]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, LC,Song, ZT,Liu, B,et al. Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application[J]. CHINESE PHYSICS LETTERS,2007,24(4):1103-1105. |
| APA | Wu, LC.,Song, ZT.,Liu, B.,Rao, F.,Xu, C.,...&Feng, SL.(2007).Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application.CHINESE PHYSICS LETTERS,24(4),1103-1105. |
| MLA | Wu, LC,et al."Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application".CHINESE PHYSICS LETTERS 24.4(2007):1103-1105. |
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