The simulation of the thermal stress in GaN epilayer on silicon-based substrates
文献类型：期刊论文
| 作者 | Sun, JY ; Chen, J ; Yang, ZF ; Ou, X ; Wang, X |
| 刊名 | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
 |
| 出版日期 | 2007 |
| 页码 | 1892-1894 |
| 关键词 | GROWTH MOCVD |
| 通讯作者 | Sun, JY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Optics; Physics, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95111]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, JY,Chen, J,Yang, ZF,et al. The simulation of the thermal stress in GaN epilayer on silicon-based substrates[J]. AD'07: Proceedings of Asia Display 2007, Vols 1 and 2,2007:1892-1894. |
| APA | Sun, JY,Chen, J,Yang, ZF,Ou, X,&Wang, X.(2007).The simulation of the thermal stress in GaN epilayer on silicon-based substrates.AD'07: Proceedings of Asia Display 2007, Vols 1 and 2,1892-1894. |
| MLA | Sun, JY,et al."The simulation of the thermal stress in GaN epilayer on silicon-based substrates".AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 (2007):1892-1894. |
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