Modified substrate-current model for high voltage n-channel metal-oxide-semiconductor transistor and its implication on transistor design
文献类型：期刊论文
| 作者 | Dai, MZ ; Yap, A ; Huang, K ; Huang, SY ; Wang, J ; Wang, S ; Jiang, I ; Zhang, WJ ; Yi, L ; Cheng, A ; Liu, SH ; Liao, KY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:23页码:233504-233504 |
| 关键词 | DEGRADATION MOSFETS LDD |
| ISSN号 | 0003-6951 |
| 通讯作者 | Dai, MZ, Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95120]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, MZ,Yap, A,Huang, K,et al. Modified substrate-current model for high voltage n-channel metal-oxide-semiconductor transistor and its implication on transistor design[J]. APPLIED PHYSICS LETTERS,2007,91(23):233504-233504. |
| APA | Dai, MZ.,Yap, A.,Huang, K.,Huang, SY.,Wang, J.,...&Liao, KY.(2007).Modified substrate-current model for high voltage n-channel metal-oxide-semiconductor transistor and its implication on transistor design.APPLIED PHYSICS LETTERS,91(23),233504-233504. |
| MLA | Dai, MZ,et al."Modified substrate-current model for high voltage n-channel metal-oxide-semiconductor transistor and its implication on transistor design".APPLIED PHYSICS LETTERS 91.23(2007):233504-233504. |
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