中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O-3 thin film grown on LSAT (001) single crystal substrate

文献类型:期刊论文

作者Yun, P ; Wang, DY ; Ying, Z ; Song, ZT ; Feng, SL ; Wang, Y ; Chan, HLW
刊名INTEGRATED FERROELECTRICS
出版日期2007
卷号93页码:154-+
ISSN号1058-4587
通讯作者Wang, Y, Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
学科主题Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95122]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Yun, P,Wang, DY,Ying, Z,et al. In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O-3 thin film grown on LSAT (001) single crystal substrate[J]. INTEGRATED FERROELECTRICS,2007,93:154-+.
APA Yun, P.,Wang, DY.,Ying, Z.,Song, ZT.,Feng, SL.,...&Chan, HLW.(2007).In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O-3 thin film grown on LSAT (001) single crystal substrate.INTEGRATED FERROELECTRICS,93,154-+.
MLA Yun, P,et al."In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O-3 thin film grown on LSAT (001) single crystal substrate".INTEGRATED FERROELECTRICS 93(2007):154-+.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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