Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Sun,JY ; Chen,J ; Wang,X ; Wang,JF ; Liu,W ; Zhu,JJ ; Yang,H杨辉 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 61期号:22页码:4416-4419 |
| 关键词 | ART. HETEROEPITAXY EVOLUTION SI(111) LAYERS |
| ISSN号 | 0167-577X |
| 通讯作者 | Sun, JY, No 865,Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science ; Multidisciplinary; Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95138]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun,JY,Chen,J,Wang,X,et al. Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition[J]. MATERIALS LETTERS,2007,61(22):4416-4419. |
| APA | Sun,JY.,Chen,J.,Wang,X.,Wang,JF.,Liu,W.,...&Yang,H杨辉.(2007).Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition.MATERIALS LETTERS,61(22),4416-4419. |
| MLA | Sun,JY,et al."Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition".MATERIALS LETTERS 61.22(2007):4416-4419. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。