Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density
文献类型：期刊论文
| 作者 | Zheng, ZS ; Zhang, EX ; Liu, ZL ; Zhang, ZX ; Li, N ; Li, GH |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:9页码:5446-5451 |
| 关键词 | IMPLANTING NITROGEN RADIATION HARDNESS SOI TECHNOLOGIES IMPROVEMENT LAYER ION |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95142]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng, ZS,Zhang, EX,Liu, ZL,et al. Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density[J]. ACTA PHYSICA SINICA,2007,56(9):5446-5451. |
| APA | Zheng, ZS,Zhang, EX,Liu, ZL,Zhang, ZX,Li, N,&Li, GH.(2007).Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density.ACTA PHYSICA SINICA,56(9),5446-5451. |
| MLA | Zheng, ZS,et al."Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density".ACTA PHYSICA SINICA 56.9(2007):5446-5451. |
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