Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3)
文献类型：期刊论文
| 作者 | Feng, R ; Song, Z ; Wu, L ; Feng, S ; Chen, B |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2007 |
| 卷号 | 154期号:12页码:H999-H1003 |
| 关键词 | RANDOM-ACCESS MEMORY THIN-FILMS STORAGE ALLOYS |
| ISSN号 | 0013-4651 |
| 通讯作者 | Feng, R, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95153]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, R,Song, Z,Wu, L,et al. Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3)[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2007,154(12):H999-H1003. |
| APA | Feng, R,Song, Z,Wu, L,Feng, S,&Chen, B.(2007).Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3).JOURNAL OF THE ELECTROCHEMICAL SOCIETY,154(12),H999-H1003. |
| MLA | Feng, R,et al."Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3)".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154.12(2007):H999-H1003. |
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