Transparent thin-film transistors using ZnMgO as dielectrics and channel
文献类型：期刊论文
| 作者 | Wu, HZ ; Liang, J ; Jin, GF ; Lao, YF ; Xu, TN |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2007 |
| 卷号 | 54期号:11页码:2856-2859 |
| 关键词 | ELECTRICAL-PROPERTIES BAND-GAP ZNO MGXZN1-XO SILICON FABRICATION ALLOY |
| ISSN号 | 0018-9383 |
| 通讯作者 | Wu, HZ, Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95154]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, HZ,Liang, J,Jin, GF,et al. Transparent thin-film transistors using ZnMgO as dielectrics and channel[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2007,54(11):2856-2859. |
| APA | Wu, HZ,Liang, J,Jin, GF,Lao, YF,&Xu, TN.(2007).Transparent thin-film transistors using ZnMgO as dielectrics and channel.IEEE TRANSACTIONS ON ELECTRON DEVICES,54(11),2856-2859. |
| MLA | Wu, HZ,et al."Transparent thin-film transistors using ZnMgO as dielectrics and channel".IEEE TRANSACTIONS ON ELECTRON DEVICES 54.11(2007):2856-2859. |
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