Crystallization and C-RAM application of Ag-doped Sb2Te3 material
文献类型：期刊论文
| 作者 | Xu, JQ ; Liu, B ; Song, ZT ; Feng, SL ; Chen, BM |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 127期号:2-3页码:228-232 |
| 关键词 | GE2SB2TE5 FILM THIN-FILMS RESISTANCE STORAGE MEMORY |
| ISSN号 | 0921-5107 |
| 通讯作者 | Xu, JQ, Chinese Acad Sci, Res Ctr Funct Semicond Film Engn & Technol, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95169]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, JQ,Liu, B,Song, ZT,et al. Crystallization and C-RAM application of Ag-doped Sb2Te3 material[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2006,127(2-3):228-232. |
| APA | Xu, JQ,Liu, B,Song, ZT,Feng, SL,&Chen, BM.(2006).Crystallization and C-RAM application of Ag-doped Sb2Te3 material.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,127(2-3),228-232. |
| MLA | Xu, JQ,et al."Crystallization and C-RAM application of Ag-doped Sb2Te3 material".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 127.2-3(2006):228-232. |
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