中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of ultra-thin Y2O3 films as insulator of MFISFET structure

文献类型:期刊论文

作者Tang, MH ; Zhou, YC ; Zheng, XJ ; Yan, Z ; Cheng, CP ; Ye, Z ; Hu, ZS
刊名TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
出版日期2006
卷号16页码:S63-S66
关键词ELECTRICAL CHARACTERISTICS SILICON SI EVAPORATION LAYERS SUBSTRATE GROWTH BUFFER
ISSN号1003-6326
通讯作者Zhou, YC, Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Peoples R China
学科主题Metallurgy & Metallurgical Engineering
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95172]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Tang, MH,Zhou, YC,Zheng, XJ,et al. Characterization of ultra-thin Y2O3 films as insulator of MFISFET structure[J]. TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,2006,16:S63-S66.
APA Tang, MH.,Zhou, YC.,Zheng, XJ.,Yan, Z.,Cheng, CP.,...&Hu, ZS.(2006).Characterization of ultra-thin Y2O3 films as insulator of MFISFET structure.TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,16,S63-S66.
MLA Tang, MH,et al."Characterization of ultra-thin Y2O3 films as insulator of MFISFET structure".TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 16(2006):S63-S66.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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