A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding
文献类型：期刊论文
| 作者 | Ma, XB ; Liu, WL ; Chen, C ; Zhan, D ; Song, ZT ; Feng, SL |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:7页码:959-963 |
| 关键词 | N-TYPE SILICON BORON DEFECT |
| ISSN号 | 0268-1242 |
| 通讯作者 | Ma, XB, Chinese Acad Sci, Nanotechnol Lab, Res Ctr Funct Semicond Film Engn & Technol, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95173]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, XB,Liu, WL,Chen, C,et al. A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(7):959-963. |
| APA | Ma, XB,Liu, WL,Chen, C,Zhan, D,Song, ZT,&Feng, SL.(2006).A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(7),959-963. |
| MLA | Ma, XB,et al."A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.7(2006):959-963. |
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