InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu, AH ; Ai, LK ; Sun, H ; Qi, M ; Su, SB ; Liu, XY ; Liu, XC ; Qian, H |
| 刊名 | JOURNAL OF CERAMIC PROCESSING RESEARCH
 |
| 出版日期 | 2006 |
| 卷号 | 7期号:2页码:177-179 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS BASE GAIN |
| ISSN号 | 1229-9162 |
| 通讯作者 | Xu, AH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Ceramics |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95174]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, AH,Ai, LK,Sun, H,et al. InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy[J]. JOURNAL OF CERAMIC PROCESSING RESEARCH,2006,7(2):177-179. |
| APA | Xu, AH.,Ai, LK.,Sun, H.,Qi, M.,Su, SB.,...&Qian, H.(2006).InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy.JOURNAL OF CERAMIC PROCESSING RESEARCH,7(2),177-179. |
| MLA | Xu, AH,et al."InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy".JOURNAL OF CERAMIC PROCESSING RESEARCH 7.2(2006):177-179. |
入库方式： OAI收割
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