Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator
文献类型：期刊论文
| 作者 | Di, ZF ; Zhang, M ; Liu, WL ; Shen, QW ; Luo, SH ; Song, ZT ; Lin, CL ; Chu, PK |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2006 |
| 卷号 | 24期号:3页码:1151-1155 |
| 关键词 | RAY PHOTOELECTRON-SPECTROSCOPY ATOMIC-LAYER DEPOSITION INTERFACIAL CHARACTERISTICS STRAINED-SI THIN-FILMS ULTRATHIN SILICON HETEROSTRUCTURE OXIDATION CHANNEL |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95177]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Zhang, M,Liu, WL,et al. Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2006,24(3):1151-1155. |
| APA | Di, ZF.,Zhang, M.,Liu, WL.,Shen, QW.,Luo, SH.,...&Chu, PK.(2006).Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,24(3),1151-1155. |
| MLA | Di, ZF,et al."Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24.3(2006):1151-1155. |
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