A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method
文献类型：期刊论文
| 作者 | Zhang, EX ; Sun, JY ; Zhang, ZX ; Qian, C ; Jiang, J ; Wang, X ; En, YF ; Luo, HW ; Shi, Q ; Zhang, XW |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:3页码:287-290 |
| 关键词 | SIMOX BURIED OXIDES RAY PHOTOELECTRON-SPECTROSCOPY OXYGEN IMPLANT DEFECTS A-SIO2 |
| ISSN号 | 0268-1242 |
| 通讯作者 | Zhang, EX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95183]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, EX,Sun, JY,Zhang, ZX,et al. A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):287-290. |
| APA | Zhang, EX.,Sun, JY.,Zhang, ZX.,Qian, C.,Jiang, J.,...&Zhang, XW.(2006).A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(3),287-290. |
| MLA | Zhang, EX,et al."A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.3(2006):287-290. |
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