Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
文献类型：期刊论文
| 作者 | Zhang, EX ; Qian, C ; Zhang, ZX ; Lin, CL ; Wang, X |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 15期号:4页码:792-797 |
| 关键词 | IMPLANTING NITROGEN RADIATION RESPONSE THERMAL OXIDES SIMOX CHARGE ELECTRON OXYGEN HOLE TRANSISTORS TECHNOLOGY |
| ISSN号 | 1009-1963 |
| 通讯作者 | Zhang, EX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95200]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, EX,Qian, C,Zhang, ZX,et al. Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation[J]. CHINESE PHYSICS,2006,15(4):792-797. |
| APA | Zhang, EX,Qian, C,Zhang, ZX,Lin, CL,&Wang, X.(2006).Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation.CHINESE PHYSICS,15(4),792-797. |
| MLA | Zhang, EX,et al."Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation".CHINESE PHYSICS 15.4(2006):792-797. |
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