High-quality GaN film grown by HVPE with an anodized aluminum oxide mask
文献类型：期刊论文
| 作者 | Lei, BL ; Yu, GG ; Ye, HH ; Meng, S ; Qi, M ; Li, AZ |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:7页码:G242-G244 |
| 关键词 | VAPOR-PHASE EPITAXY THREADING DISLOCATIONS OPTICAL-PROPERTIES GALLIUM NITRIDE SAPPHIRE LAYERS REDUCTION TEMPLATES SI(111) |
| ISSN号 | 1099-0062 |
| 通讯作者 | Lei, BL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95205]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lei, BL,Yu, GG,Ye, HH,et al. High-quality GaN film grown by HVPE with an anodized aluminum oxide mask[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2006,9(7):G242-G244. |
| APA | Lei, BL,Yu, GG,Ye, HH,Meng, S,Qi, M,&Li, AZ.(2006).High-quality GaN film grown by HVPE with an anodized aluminum oxide mask.ELECTROCHEMICAL AND SOLID STATE LETTERS,9(7),G242-G244. |
| MLA | Lei, BL,et al."High-quality GaN film grown by HVPE with an anodized aluminum oxide mask".ELECTROCHEMICAL AND SOLID STATE LETTERS 9.7(2006):G242-G244. |
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