中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

文献类型:期刊论文

作者Di, ZF ; Chu, PK ; Zhu, M ; Fu, RKY ; Luo, SH ; Shao, L ; Nastasi, M ; Chen, P ; Alford, TL ; Mayer, JW ; Zhang, M ; Liu, WL ; Song, ZT ; Lin, CL
刊名APPLIED PHYSICS LETTERS
出版日期2006
卷号88期号:14页码:142108-142108
关键词SILICON-ON-DIAMOND IMPLANTATION TECHNOLOGY MOSFETS
ISSN号0003-6951
通讯作者Chu, PK, City Univ Hong Kong, Dept Phys Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95225]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Di, ZF,Chu, PK,Zhu, M,et al. Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects[J]. APPLIED PHYSICS LETTERS,2006,88(14):142108-142108.
APA Di, ZF.,Chu, PK.,Zhu, M.,Fu, RKY.,Luo, SH.,...&Lin, CL.(2006).Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects.APPLIED PHYSICS LETTERS,88(14),142108-142108.
MLA Di, ZF,et al."Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects".APPLIED PHYSICS LETTERS 88.14(2006):142108-142108.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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