Total dose radiation tolerance of phase change memory cell with GeSbTe alloy
文献类型：期刊论文
| 作者 | Wu, LC ; Liu, B ; Song, ZT ; Feng, GM ; Feng, SL ; Chen, B |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:9页码:2557-2559 |
| 关键词 | AMORPHOUS THIN-FILMS RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NONVOLATILE GE20TE80-XBIX IMPLANTATION TEMPERATURE TRANSITION |
| ISSN号 | 0256-307X |
| 通讯作者 | Wu, LC, Chinese Acad Sci, Lab Nanotechnol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95232]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, LC,Liu, B,Song, ZT,et al. Total dose radiation tolerance of phase change memory cell with GeSbTe alloy[J]. CHINESE PHYSICS LETTERS,2006,23(9):2557-2559. |
| APA | Wu, LC,Liu, B,Song, ZT,Feng, GM,Feng, SL,&Chen, B.(2006).Total dose radiation tolerance of phase change memory cell with GeSbTe alloy.CHINESE PHYSICS LETTERS,23(9),2557-2559. |
| MLA | Wu, LC,et al."Total dose radiation tolerance of phase change memory cell with GeSbTe alloy".CHINESE PHYSICS LETTERS 23.9(2006):2557-2559. |
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