中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application

文献类型:期刊论文

作者Men, CL ; Lin, CL
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
出版日期2006
卷号133期号:1-3页码:124-128
关键词CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH ALUMINUM NITRIDE ELECTRICAL-PROPERTIES SILICON INSULATOR TEMPERATURE FABRICATION SI(111) AIN
ISSN号0921-5107
通讯作者Men, CL, Shanghai Univ Sci & Technol, Coll Power Engn, Shanghai 200093, Peoples R China
学科主题Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95238]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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GB/T 7714
Men, CL,Lin, CL. A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2006,133(1-3):124-128.
APA Men, CL,&Lin, CL.(2006).A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,133(1-3),124-128.
MLA Men, CL,et al."A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 133.1-3(2006):124-128.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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