A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application
文献类型:期刊论文
作者 | Men, CL ; Lin, CL |
刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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出版日期 | 2006 |
卷号 | 133期号:1-3页码:124-128 |
关键词 | CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH ALUMINUM NITRIDE ELECTRICAL-PROPERTIES SILICON INSULATOR TEMPERATURE FABRICATION SI(111) AIN |
ISSN号 | 0921-5107 |
通讯作者 | Men, CL, Shanghai Univ Sci & Technol, Coll Power Engn, Shanghai 200093, Peoples R China |
学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95238] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Men, CL,Lin, CL. A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2006,133(1-3):124-128. |
APA | Men, CL,&Lin, CL.(2006).A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,133(1-3),124-128. |
MLA | Men, CL,et al."A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 133.1-3(2006):124-128. |
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