A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application
文献类型:期刊论文
| 作者 | Men, CL ; Lin, CL |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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| 出版日期 | 2006 |
| 卷号 | 133期号:1-3页码:124-128 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH ALUMINUM NITRIDE ELECTRICAL-PROPERTIES SILICON INSULATOR TEMPERATURE FABRICATION SI(111) AIN |
| ISSN号 | 0921-5107 |
| 通讯作者 | Men, CL, Shanghai Univ Sci & Technol, Coll Power Engn, Shanghai 200093, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95238] ![]() |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Men, CL,Lin, CL. A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2006,133(1-3):124-128. |
| APA | Men, CL,&Lin, CL.(2006).A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,133(1-3),124-128. |
| MLA | Men, CL,et al."A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 133.1-3(2006):124-128. |
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