中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films

文献类型:期刊论文

作者Zhang, WJ ; Yi, L ; Tao, K ; Ma, Y ; Chang, PY ; Wu, J
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版日期2006
卷号17期号:11页码:931-935
关键词THIN-FILMS ELECTROMIGRATION TEXTURE INTERCONNECTS MICROSTRUCTURE METALLIZATION UNDERLAYER ROUGHNESS
ISSN号0957-4522
通讯作者Zhang, WJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95240]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, WJ,Yi, L,Tao, K,et al. The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2006,17(11):931-935.
APA Zhang, WJ,Yi, L,Tao, K,Ma, Y,Chang, PY,&Wu, J.(2006).The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,17(11),931-935.
MLA Zhang, WJ,et al."The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 17.11(2006):931-935.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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