中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electromigration in Al interconnects and the challenges in ultra-deep submicron technology

文献类型:期刊论文

作者Zhang, WJ(张文杰) ; Yi, WB(易万兵) ; Wu, J(吴瑾)
刊名ACTA PHYSICA SINICA
出版日期2006
卷号55期号:10页码:5424-5434
关键词THIN-FILMS TRANSPORT MECHANISMS DUAL-DAMASCENE ALUMINUM FILMS TEXTURE GROWTH GRAIN TI RELIABILITY UNDERLAYER
ISSN号1000-3290
通讯作者Zhang, WJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
原文出处http://www.cnki.net/kcms/detail/detail.aspx?Quer20120228ID=1&CurRec=1&DbCode=CJFQ&dbname=CJFD0608&filename=WLXB200610073&uid=WEEvREcwSlJHSldRa1FiOS9VZHNRK0lqdEJl201202283k4R1ZacDBLa3VWRXR6bVNIc2ZLMmF1VUZraHU3WS9iT0s4PQ==
语种中文
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95242]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, WJ,Yi, WB,Wu, J. Electromigration in Al interconnects and the challenges in ultra-deep submicron technology[J]. ACTA PHYSICA SINICA,2006,55(10):5424-5434.
APA Zhang, WJ,Yi, WB,&Wu, J.(2006).Electromigration in Al interconnects and the challenges in ultra-deep submicron technology.ACTA PHYSICA SINICA,55(10),5424-5434.
MLA Zhang, WJ,et al."Electromigration in Al interconnects and the challenges in ultra-deep submicron technology".ACTA PHYSICA SINICA 55.10(2006):5424-5434.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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