Annealing effect on electrical properties of high-k MgZnO film on silicon
文献类型：期刊论文
| 作者 | Liang, J ; Wu, HZ ; Chen, NB ; Xu, TN |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:5页码:L15-L19 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION GATE DIELECTRICS THIN-FILMS ZRO2 SI TEMPERATURE TRANSISTORS SI(100) |
| ISSN号 | 0268-1242 |
| 通讯作者 | Liang, J, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95254]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liang, J,Wu, HZ,Chen, NB,et al. Annealing effect on electrical properties of high-k MgZnO film on silicon[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(5):L15-L19. |
| APA | Liang, J,Wu, HZ,Chen, NB,&Xu, TN.(2005).Annealing effect on electrical properties of high-k MgZnO film on silicon.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(5),L15-L19. |
| MLA | Liang, J,et al."Annealing effect on electrical properties of high-k MgZnO film on silicon".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.5(2005):L15-L19. |
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