中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Annealing effect on electrical properties of high-k MgZnO film on silicon

文献类型:期刊论文

作者Liang, J ; Wu, HZ ; Chen, NB ; Xu, TN
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2005
卷号20期号:5页码:L15-L19
关键词CHEMICAL-VAPOR-DEPOSITION GATE DIELECTRICS THIN-FILMS ZRO2 SI TEMPERATURE TRANSISTORS SI(100)
ISSN号0268-1242
通讯作者Liang, J, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95254]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Liang, J,Wu, HZ,Chen, NB,et al. Annealing effect on electrical properties of high-k MgZnO film on silicon[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(5):L15-L19.
APA Liang, J,Wu, HZ,Chen, NB,&Xu, TN.(2005).Annealing effect on electrical properties of high-k MgZnO film on silicon.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(5),L15-L19.
MLA Liang, J,et al."Annealing effect on electrical properties of high-k MgZnO film on silicon".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.5(2005):L15-L19.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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