中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and characterization of GaAs/AlGaAs Thue-Morse quasicrystal photonic bandgap structures

文献类型:期刊论文

作者Zhang, YG(张永刚) ; Jiang, XY ; Zhu, C ; Gu, Y ; Li, AZ ; Qi, M ; Feng, SL
刊名CHINESE PHYSICS LETTERS
出版日期2005
卷号22期号:5页码:1191-1194
关键词LIGHT TRANSMISSION LOCALIZATION MULTILAYERS
ISSN号0256-307X
通讯作者Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95260]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, YG,Jiang, XY,Zhu, C,et al. Growth and characterization of GaAs/AlGaAs Thue-Morse quasicrystal photonic bandgap structures[J]. CHINESE PHYSICS LETTERS,2005,22(5):1191-1194.
APA Zhang, YG.,Jiang, XY.,Zhu, C.,Gu, Y.,Li, AZ.,...&Feng, SL.(2005).Growth and characterization of GaAs/AlGaAs Thue-Morse quasicrystal photonic bandgap structures.CHINESE PHYSICS LETTERS,22(5),1191-1194.
MLA Zhang, YG,et al."Growth and characterization of GaAs/AlGaAs Thue-Morse quasicrystal photonic bandgap structures".CHINESE PHYSICS LETTERS 22.5(2005):1191-1194.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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