InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Chen, XJ ; Xu, AH ; Ai, LK ; Qi, M |
| 刊名 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY
 |
| 出版日期 | 2005 |
| 卷号 | 46页码:S229-S232 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS HBTS |
| ISSN号 | 0374-4884 |
| 通讯作者 | Chen, XJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95273]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, XJ,Xu, AH,Ai, LK,et al. InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2005,46:S229-S232. |
| APA | Chen, XJ,Xu, AH,Ai, LK,&Qi, M.(2005).InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy.JOURNAL OF THE KOREAN PHYSICAL SOCIETY,46,S229-S232. |
| MLA | Chen, XJ,et al."InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy".JOURNAL OF THE KOREAN PHYSICAL SOCIETY 46(2005):S229-S232. |
入库方式： OAI收割
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