Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells
文献类型：期刊论文
| 作者 | Lao, YF ; Wu, HZ ; Huang, ZC |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:6页码:615-620 |
| ISSN号 | 0268-1242 |
| 关键词 | VERTICAL-CAVITY LASERS PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY SURFACE-EMITTING LASERS LOW-THRESHOLD MU-M OPTICAL-PROPERTIES EFFECTIVE-MASS INP INGAASP FUSION |
| 通讯作者 | Lao, YF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95277]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lao, YF,Wu, HZ,Huang, ZC. Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(6):615-620. |
| APA | Lao, YF,Wu, HZ,&Huang, ZC.(2005).Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(6),615-620. |
| MLA | Lao, YF,et al."Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.6(2005):615-620. |
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