Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation
文献类型：期刊论文
| 作者 | Cheng,XL ; Chen,ZJ ; Wang,YJ ; Jin,B ; Zhang,F ; Zou,SC |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2005 |
| 卷号 | 234期号:3页码:243-248 |
| 关键词 | HOLE MOBILITY ENHANCEMENT HIGH-GE FRACTION STRAINED-SI INSULATOR SUBSTRATE N-MOSFETS ELECTRON ULTRATHIN |
| ISSN号 | 0168-583X |
| 通讯作者 | Cheng, XL, Univ Sci & Technol Suzhou, Suzhou 215009, Peoples R China |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics ; Atomic ; Molecular & Chemical; Physics ; Nuclear |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95280]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng,XL,Chen,ZJ,Wang,YJ,et al. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2005,234(3):243-248. |
| APA | Cheng,XL,Chen,ZJ,Wang,YJ,Jin,B,Zhang,F,&Zou,SC.(2005).Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,234(3),243-248. |
| MLA | Cheng,XL,et al."Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 234.3(2005):243-248. |
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