中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film

文献类型:期刊论文

作者Liu, B ; Song, ZT ; Zhang, T ; Feng, SL ; Chen, BM
刊名APPLIED SURFACE SCIENCE
出版日期2005
卷号242期号:1-2页码:62-69
关键词CHANGE OPTICAL DISKS PHASE-CHANGE THIN-FILMS RAMAN-SCATTERING MEMORY SB CRYSTALLIZATION OXYGEN
ISSN号0169-4332
通讯作者Liu, B, Chinese Acad Sci, Shanghai Inst Micro Syst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China
学科主题Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95282]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Liu, B,Song, ZT,Zhang, T,et al. Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film[J]. APPLIED SURFACE SCIENCE,2005,242(1-2):62-69.
APA Liu, B,Song, ZT,Zhang, T,Feng, SL,&Chen, BM.(2005).Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film.APPLIED SURFACE SCIENCE,242(1-2),62-69.
MLA Liu, B,et al."Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film".APPLIED SURFACE SCIENCE 242.1-2(2005):62-69.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。