中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects

文献类型:期刊论文

作者Zhu, M ; Liu, WL ; Song, ZT ; Fu, RKY ; Chu, PK ; Lin, CL
刊名MATERIALS LETTERS
出版日期2005
卷号59期号:4页码:510-513
关键词IMPLANTATION MOSFETS
ISSN号0167-577X
通讯作者Zhu, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semiconductor Film Engn & Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95284]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhu, M,Liu, WL,Song, ZT,et al. Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects[J]. MATERIALS LETTERS,2005,59(4):510-513.
APA Zhu, M,Liu, WL,Song, ZT,Fu, RKY,Chu, PK,&Lin, CL.(2005).Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects.MATERIALS LETTERS,59(4),510-513.
MLA Zhu, M,et al."Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects".MATERIALS LETTERS 59.4(2005):510-513.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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