A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs
文献类型：期刊论文
| 作者 | Yang, WW ; Cheng, XH ; Yu, YH ; Song, ZR ; Shen, DS |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2005 |
| 卷号 | 49期号:1页码:43-48 |
| 关键词 | SURFACE FIELD DISTRIBUTION THRESHOLD VOLTAGE RESURF DEVICES OPTIMIZATION |
| ISSN号 | 0038-1101 |
| 通讯作者 | Yang, WW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95286]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, WW,Cheng, XH,Yu, YH,et al. A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs[J]. SOLID-STATE ELECTRONICS,2005,49(1):43-48. |
| APA | Yang, WW,Cheng, XH,Yu, YH,Song, ZR,&Shen, DS.(2005).A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs.SOLID-STATE ELECTRONICS,49(1),43-48. |
| MLA | Yang, WW,et al."A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs".SOLID-STATE ELECTRONICS 49.1(2005):43-48. |
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