中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AIN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

文献类型:期刊论文

作者Zhu, M ; Chen, P ; Fu, RKY ; Liu, WL ; Lin, CL ; Chu, PK
刊名APPLIED SURFACE SCIENCE
出版日期2005
卷号239期号:3-4页码:327-334
关键词EPITAXIAL-GROWTH ALUMINUM NITRIDE SMART-CUT(R) PROCESS SI(111) DEPOSITION SAPPHIRE SI
ISSN号0169-4332
通讯作者Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95289]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhu, M,Chen, P,Fu, RKY,et al. AIN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application[J]. APPLIED SURFACE SCIENCE,2005,239(3-4):327-334.
APA Zhu, M,Chen, P,Fu, RKY,Liu, WL,Lin, CL,&Chu, PK.(2005).AIN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application.APPLIED SURFACE SCIENCE,239(3-4),327-334.
MLA Zhu, M,et al."AIN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application".APPLIED SURFACE SCIENCE 239.3-4(2005):327-334.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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