Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation
文献类型：期刊论文
| 作者 | Di, ZF ; Huang, AP ; Chu, PK ; Zhang, M ; Liu, WL ; Song, ZT ; Luo, SH ; Lin, CL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 281期号:2-4页码:275-280 |
| 关键词 | MOBILITY ENHANCEMENT RAMAN-SCATTERING HIGH-PERFORMANCE COMPLIANT OXIDE N-MOSFETS OXIDATION SUBSTRATE STABILITY ELECTRON ISLANDS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95294]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Huang, AP,Chu, PK,et al. Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation[J]. JOURNAL OF CRYSTAL GROWTH,2005,281(2-4):275-280. |
| APA | Di, ZF.,Huang, AP.,Chu, PK.,Zhang, M.,Liu, WL.,...&Lin, CL.(2005).Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation.JOURNAL OF CRYSTAL GROWTH,281(2-4),275-280. |
| MLA | Di, ZF,et al."Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation".JOURNAL OF CRYSTAL GROWTH 281.2-4(2005):275-280. |
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