Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory
文献类型：期刊论文
| 作者 | Liu, WL ; Lee, PF ; Dai, JY ; Wang, J ; Chan, HLW ; Choy, CL ; Song, ZT ; Feng, SL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:1页码:13110-13110 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION DEVICE HFO2 DIELECTRICS OXIDATION SIO2 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Dai, JY, Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95296]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, WL,Lee, PF,Dai, JY,et al. Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory[J]. APPLIED PHYSICS LETTERS,2005,86(1):13110-13110. |
| APA | Liu, WL.,Lee, PF.,Dai, JY.,Wang, J.,Chan, HLW.,...&Feng, SL.(2005).Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory.APPLIED PHYSICS LETTERS,86(1),13110-13110. |
| MLA | Liu, WL,et al."Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory".APPLIED PHYSICS LETTERS 86.1(2005):13110-13110. |
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