Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation
文献类型：期刊论文
| 作者 | Di, ZF ; Chu, PK ; Zhang, M ; Liu, WL ; Song, ZT ; Lin, CL |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2005 |
| 卷号 | 97期号:6页码:64504-64504 |
| 关键词 | FIELD-EFFECT TRANSISTORS STRAINED-SI MOBILITY ENHANCEMENT OXIDATION ELECTRON |
| ISSN号 | 0021-8979 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95297]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Chu, PK,Zhang, M,et al. Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation[J]. JOURNAL OF APPLIED PHYSICS,2005,97(6):64504-64504. |
| APA | Di, ZF,Chu, PK,Zhang, M,Liu, WL,Song, ZT,&Lin, CL.(2005).Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation.JOURNAL OF APPLIED PHYSICS,97(6),64504-64504. |
| MLA | Di, ZF,et al."Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation".JOURNAL OF APPLIED PHYSICS 97.6(2005):64504-64504. |
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