Reversible phase change for C-RAM nano-cell-element fabricated by focused ion beam method
文献类型：期刊论文
| 作者 | Liu, B ; Song, ZT ; Feng, SL ; Chen, BM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:3页码:758-761 |
| 关键词 | RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS CRYSTALLIZATION TEMPERATURE MEDIA |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, B, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95299]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Song, ZT,Feng, SL,et al. Reversible phase change for C-RAM nano-cell-element fabricated by focused ion beam method[J]. CHINESE PHYSICS LETTERS,2005,22(3):758-761. |
| APA | Liu, B,Song, ZT,Feng, SL,&Chen, BM.(2005).Reversible phase change for C-RAM nano-cell-element fabricated by focused ion beam method.CHINESE PHYSICS LETTERS,22(3),758-761. |
| MLA | Liu, B,et al."Reversible phase change for C-RAM nano-cell-element fabricated by focused ion beam method".CHINESE PHYSICS LETTERS 22.3(2005):758-761. |
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