中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

文献类型:期刊论文

作者Liu, B ; Song, ZT ; Zhang, T ; Xia, JL ; Feng, SL ; Chen, B
刊名THIN SOLID FILMS
出版日期2005
卷号478期号:1-2页码:49-55
ISSN号0040-6090
关键词CHANGE OPTICAL DISKS CRYSTAL-STRUCTURE RAMAN-SCATTERING THIN-FILMS MEMORY SB CRYSTALLIZATION
通讯作者Liu, B, CAS, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Res Ctr Funct Semicon Film Engn & Technol, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95302]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Liu, B,Song, ZT,Zhang, T,et al. Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film[J]. THIN SOLID FILMS,2005,478(1-2):49-55.
APA Liu, B,Song, ZT,Zhang, T,Xia, JL,Feng, SL,&Chen, B.(2005).Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film.THIN SOLID FILMS,478(1-2),49-55.
MLA Liu, B,et al."Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film".THIN SOLID FILMS 478.1-2(2005):49-55.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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