Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film
文献类型:期刊论文
作者 | Liu, B ; Song, ZT ; Zhang, T ; Xia, JL ; Feng, SL ; Chen, B |
刊名 | THIN SOLID FILMS |
出版日期 | 2005 |
卷号 | 478期号:1-2页码:49-55 |
ISSN号 | 0040-6090 |
关键词 | CHANGE OPTICAL DISKS CRYSTAL-STRUCTURE RAMAN-SCATTERING THIN-FILMS MEMORY SB CRYSTALLIZATION |
通讯作者 | Liu, B, CAS, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Res Ctr Funct Semicon Film Engn & Technol, Shanghai 200050, Peoples R China |
学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95302] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Liu, B,Song, ZT,Zhang, T,et al. Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film[J]. THIN SOLID FILMS,2005,478(1-2):49-55. |
APA | Liu, B,Song, ZT,Zhang, T,Xia, JL,Feng, SL,&Chen, B.(2005).Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film.THIN SOLID FILMS,478(1-2),49-55. |
MLA | Liu, B,et al."Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film".THIN SOLID FILMS 478.1-2(2005):49-55. |
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