Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials
文献类型：期刊论文
| 作者 | Chen, J ; Wang, X ; Jin, B ; Zhang, E ; Sun, J ; Wang, X |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:3页码:305-309 |
| 关键词 | IMPLANTED SILICON ISOTOPIC EXCHANGE ON-INSULATOR SI TEMPERATURE DIFFUSION |
| ISSN号 | 0268-1242 |
| 通讯作者 | Chen, J, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95304]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, J,Wang, X,Jin, B,et al. Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(3):305-309. |
| APA | Chen, J,Wang, X,Jin, B,Zhang, E,Sun, J,&Wang, X.(2005).Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(3),305-309. |
| MLA | Chen, J,et al."Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.3(2005):305-309. |
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