Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications
文献类型:期刊论文
作者 | Zhu, M ; Chen, P ; Fu, RKY ; Liu, WL ; Lin, CL ; Chu, PK |
刊名 | THIN SOLID FILMS
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出版日期 | 2005 |
卷号 | 476期号:2页码:312-316 |
关键词 | CHEMICAL-VAPOR-DEPOSITION THERMAL-STABILITY ZRO2 FILMS SILICON LAYERS MECHANISM SI(100) SI(001) SI |
ISSN号 | 0040-6090 |
通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95309] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhu, M,Chen, P,Fu, RKY,et al. Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications[J]. THIN SOLID FILMS,2005,476(2):312-316. |
APA | Zhu, M,Chen, P,Fu, RKY,Liu, WL,Lin, CL,&Chu, PK.(2005).Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications.THIN SOLID FILMS,476(2),312-316. |
MLA | Zhu, M,et al."Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications".THIN SOLID FILMS 476.2(2005):312-316. |
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