中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications

文献类型:期刊论文

作者Zhu, M ; Chen, P ; Fu, RKY ; Liu, WL ; Lin, CL ; Chu, PK
刊名THIN SOLID FILMS
出版日期2005
卷号476期号:2页码:312-316
关键词CHEMICAL-VAPOR-DEPOSITION THERMAL-STABILITY ZRO2 FILMS SILICON LAYERS MECHANISM SI(100) SI(001) SI
ISSN号0040-6090
通讯作者Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95309]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhu, M,Chen, P,Fu, RKY,et al. Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications[J]. THIN SOLID FILMS,2005,476(2):312-316.
APA Zhu, M,Chen, P,Fu, RKY,Liu, WL,Lin, CL,&Chu, PK.(2005).Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications.THIN SOLID FILMS,476(2),312-316.
MLA Zhu, M,et al."Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications".THIN SOLID FILMS 476.2(2005):312-316.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。