中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes

文献类型:期刊论文

作者Hong, T ; Zhang, YG(张永刚) ; Liu, TD ; Zheng, YL
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期2005
卷号152期号:5页码:G372-G374
关键词III-V-SEMICONDUCTORS ROOM-TEMPERATURE CHEMISTRIES ALGAAS INAS GAAS
ISSN号0013-4651
通讯作者Hong, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat & Informat, Shanghai 200050, Peoples R China
学科主题Electrochemistry; Materials Science, Coatings & Films
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95311]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Hong, T,Zhang, YG,Liu, TD,et al. BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2005,152(5):G372-G374.
APA Hong, T,Zhang, YG,Liu, TD,&Zheng, YL.(2005).BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,152(5),G372-G374.
MLA Hong, T,et al."BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152.5(2005):G372-G374.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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