Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers
文献类型：期刊论文
| 作者 | Cheng,XL ; Lin,ZL ; Wang,YJ ; Xiao,HB ; Zhang,F ; Zou,SC |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:3页码:L1-L4 |
| 关键词 | SIMOX TECHNOLOGY SILICON MOSFETS OXYGEN |
| ISSN号 | 0268-1242 |
| 通讯作者 | Cheng, XL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95312]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng,XL,Lin,ZL,Wang,YJ,et al. Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(3):L1-L4. |
| APA | Cheng,XL,Lin,ZL,Wang,YJ,Xiao,HB,Zhang,F,&Zou,SC.(2005).Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(3),L1-L4. |
| MLA | Cheng,XL,et al."Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.3(2005):L1-L4. |
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