Patterned SIMOX technique for deep sub-micron DSOI devices
文献类型：期刊论文
| 作者 | Tao,Kai ; Dong,Yemin ; Yi,Wanbing ; Wang,Xi ; Zou,Shichang |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:6页码:1187-1190 |
| 中文摘要 | ied oxide at deep sub-micron intervals is successfully fabricated by patterned SIMOX techniques with low dosage and low energy. The distance between the buried oxide layers can be controlled to 180 nm when the length of the silicon dioxide mask is 172 nm. |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95316]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tao,Kai,Dong,Yemin,Yi,Wanbing,et al. Patterned SIMOX technique for deep sub-micron DSOI devices[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2005,26(6):1187-1190. |
| APA | Tao,Kai,Dong,Yemin,Yi,Wanbing,Wang,Xi,&Zou,Shichang.(2005).Patterned SIMOX technique for deep sub-micron DSOI devices.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,26(6),1187-1190. |
| MLA | Tao,Kai,et al."Patterned SIMOX technique for deep sub-micron DSOI devices".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 26.6(2005):1187-1190. |
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