Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material
文献类型：期刊论文
| 作者 | Liu, B ; Song, ZT ; Feng, SL ; Chen, BM |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2005 |
| 卷号 | 82期号:2页码:168-174 |
| 关键词 | RANDOM-ACCESS MEMORY PHASE-CHANGE MEMORY MEDIA FUTURE DEVICE FILM |
| ISSN号 | 0167-9317 |
| 通讯作者 | Liu, B, Chinese Acad Sci, Shanghai Inst Microsyst & Inform Technol, State Key Lab Funct Mat Inform, Res Ctr Funct Semicond, 8665 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95326]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Song, ZT,Feng, SL,et al. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material[J]. MICROELECTRONIC ENGINEERING,2005,82(2):168-174. |
| APA | Liu, B,Song, ZT,Feng, SL,&Chen, BM.(2005).Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material.MICROELECTRONIC ENGINEERING,82(2),168-174. |
| MLA | Liu, B,et al."Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material".MICROELECTRONIC ENGINEERING 82.2(2005):168-174. |
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