GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
文献类型：期刊论文
| 作者 | Huang, ZC ; Wu, HZ ; Lao, YF ; Cao, M ; Liu, C |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 281期号:2-4页码:255-262 |
| 关键词 | MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION GAS-SOURCE MBE MISFIT DISLOCATIONS LASERS INP DEFECTS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wu, HZ, Chinese Acad Sci, Grad Sch, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95339]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, ZC,Wu, HZ,Lao, YF,et al. GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures[J]. JOURNAL OF CRYSTAL GROWTH,2005,281(2-4):255-262. |
| APA | Huang, ZC,Wu, HZ,Lao, YF,Cao, M,&Liu, C.(2005).GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures.JOURNAL OF CRYSTAL GROWTH,281(2-4),255-262. |
| MLA | Huang, ZC,et al."GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures".JOURNAL OF CRYSTAL GROWTH 281.2-4(2005):255-262. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。