Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure
文献类型：期刊论文
| 作者 | Di, ZF ; Zhang, M ; Liu, WL ; Zhu, M ; Lin, CL ; Chu, PK |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 124页码:153-157 |
| 关键词 | ELECTRON-MOBILITY ENHANCEMENT FIELD-EFFECT TRANSISTORS STRAINED-SI LAYER TRANSFER N-MOSFETS GERMANIUM STABILITY SUBSTRATE EPITAXY ALLOYS |
| ISSN号 | 0921-5107 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95341]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Zhang, M,Liu, WL,et al. Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2005,124:153-157. |
| APA | Di, ZF,Zhang, M,Liu, WL,Zhu, M,Lin, CL,&Chu, PK.(2005).Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,124,153-157. |
| MLA | Di, ZF,et al."Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124(2005):153-157. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。