Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing
文献类型：期刊论文
| 作者 | Chen, ZJ ; Zhang, F ; Chen, J ; Jin, B ; Wang, YJ ; Zhang, CS ; Zhang, ZX ; Wang, X |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:8页码:770-774 |
| 关键词 | HOLE MOBILITY ENHANCEMENT RAMAN-SCATTERING BUFFER LAYERS STRAINED-SI SUBSTRATE ELECTRON MOSFETS |
| ISSN号 | 0268-1242 |
| 通讯作者 | Chen, ZJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95344]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, ZJ,Zhang, F,Chen, J,et al. Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):770-774. |
| APA | Chen, ZJ.,Zhang, F.,Chen, J.,Jin, B.,Wang, YJ.,...&Wang, X.(2005).Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),770-774. |
| MLA | Chen, ZJ,et al."Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):770-774. |
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