Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing
文献类型:期刊论文
作者 | Chen, ZJ ; Zhang, F ; Chen, J ; Jin, B ; Wang, YJ ; Zhang, CS ; Zhang, ZX ; Wang, X |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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出版日期 | 2005 |
卷号 | 20期号:8页码:770-774 |
关键词 | HOLE MOBILITY ENHANCEMENT RAMAN-SCATTERING BUFFER LAYERS STRAINED-SI SUBSTRATE ELECTRON MOSFETS |
ISSN号 | 0268-1242 |
通讯作者 | Chen, ZJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95344] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, ZJ,Zhang, F,Chen, J,et al. Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):770-774. |
APA | Chen, ZJ.,Zhang, F.,Chen, J.,Jin, B.,Wang, YJ.,...&Wang, X.(2005).Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),770-774. |
MLA | Chen, ZJ,et al."Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):770-774. |
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