中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing

文献类型:期刊论文

作者Chen, ZJ ; Zhang, F ; Chen, J ; Jin, B ; Wang, YJ ; Zhang, CS ; Zhang, ZX ; Wang, X
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2005
卷号20期号:8页码:770-774
关键词HOLE MOBILITY ENHANCEMENT RAMAN-SCATTERING BUFFER LAYERS STRAINED-SI SUBSTRATE ELECTRON MOSFETS
ISSN号0268-1242
通讯作者Chen, ZJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95344]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, ZJ,Zhang, F,Chen, J,et al. Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):770-774.
APA Chen, ZJ.,Zhang, F.,Chen, J.,Jin, B.,Wang, YJ.,...&Wang, X.(2005).Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),770-774.
MLA Chen, ZJ,et al."Relaxed silicon-germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):770-774.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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