Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation
文献类型：期刊论文
| 作者 | Di, ZF ; Zhang, M ; Liu, WL ; Luo, SH ; Song, ZT ; Lin, CL ; Lin, Q ; Chu, PK |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:8页码:L31-L35 |
| 关键词 | ELECTRON-MOBILITY ENHANCEMENT STRAINED-SI DIFFUSION OXIDATION GERMANIUM SILICON ALLOYS |
| ISSN号 | 0268-1242 |
| 通讯作者 | Di, ZF, Chinese Acad Sci, SIMIT, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95346]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Zhang, M,Liu, WL,et al. Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):L31-L35. |
| APA | Di, ZF.,Zhang, M.,Liu, WL.,Luo, SH.,Song, ZT.,...&Chu, PK.(2005).Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),L31-L35. |
| MLA | Di, ZF,et al."Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):L31-L35. |
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